View MOC8204M_4158292.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
September 2007
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
Features
High voltage:
tm
General Description
The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
- MOC8204M, BVCER = 400V - H11D1M, H11D2M, BVCER = 300V - H11D3M, BVCER = 200V High isolation voltage: - 7500 VAC peak, 1 second Underwriters Laboratory (UL) recognized File # E90700, Volume 2
Applications
Power supply regulators Digital logic inputs Microprocessor inputs Appliance sensor systems Industrial controls
Schematic
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
(c)2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE TSTG TOPR TSOL PD EMITTER IF VR IF(pk) PD
Parameter
Storage Temperature Operating Temperature Lead Solder Temperature (Wave Solder) Total Device Power Dissipation @ TA = 25C Derate Above 25C Forward DC Current(1) Reverse Input Voltage(1) Forward Current - Peak (1s pulse, 300pps)(1) LED Power Dissipation @ TA = 25C(1) Derate Above 25C
Device
All All All All
Value
-55 to +150 -40 to +100 260 for 10 sec 260 3.5
Units
C C C mW mW/C mA V A mW mW/C
All All All All
80 6.0 3.0 150 1.41
DETECTOR PD VCER Power Dissipation @ TA = 25C Derate linearly above 25C Collector to Emitter Voltage(1) MOC8204M H11D1M, H11D2M H11D3M 4N38M VCBO Collector Base Voltage(1) MOC8204M H11D1M, H11D2M H11D3M 4N38M VECO Emitter to Collector Voltage(1) H11D1M, H11D2M, H11D3M, MOC8204M All All 300 4.0 400 300 200 80 400 300 200 80 7 V V mW mW/C V
IC
Collector Current (Continuous)
100
mA
Note: 1. Parameters meet or exceed JEDEC registered data (for 4N38M only).
(c)2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com 2
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
Electrical Characteristics (TA = 25C unless otherwise specified.)
Individual Component Characteristics Symbol
EMITTER VF VF TA BVR CJ IR Forward Voltage(2) Forward Voltage Temp. Coefficient Reverse Breakdown Voltage Junction Capacitance Reverse Leakage Current(2) Breakdown Voltage Collector to Emitter(2) IR = 10A VF = 0V, f = 1MHz VF = 1V, f = 1MHz VR = 6V All IF = 10mA All All All All 6 1.15 -1.8 25 50 65 0.05 10 1.5 V mV/C V pF pF A
Characteristic
Test Conditions
Device
Min.
Typ.*
Max.
Unit
DETECTOR BVCER RBE = 1M, IC = 1.0mA, IF = 0 MOC8204M H11D1M/2M H11D3M BVCEO BVCBO Collector to Base(2) No RBE, IC = 1.0mA IC = 100A, IF = 0 4N38M MOC8204M H11D1M/2M H11D3M 4N38M BVEBO BVECO ICER Emitter to Base Emitter to Collector Leakage Current Collector to Emitter(2) (RBE = 1M) IE = 100A, IF = 0 IE = 100A, IF = 0 VCE = 300V, IF = 0, TA = 25C VCE = 300V, IF = 0, TA = 100C VCE = 200V, IF = 0, TA = 25C VCE = 200V, IF = 0, TA = 100C VCE = 100V, IF = 0, TA = 25C VCE = 100V, IF = 0, TA = 100C ICEO No RBE, VCE = 60V, IF = 0, TA = 25C 4N38M H11D3M H11D1M/2M 4N38M All MOC8204M 400 300 200 80 400 300 200 80 7 7 10 100 250 100 250 100 250 50 V V nA A nA A nA A nA V V
Transfer Characteristics (TA = 25C Unless otherwise specified.) Symbol
EMITTER CTR Current Transfer Ratio, Collector to Emitter Saturation Voltage(2) IF = 10mA, VCE = 10V, RBE = 1M IF = 10mA, VCE = 10V IF = 10mA, IC = 0.5mA, RBE = 1M IF = 20mA, IC = 4mA SWITCHING TIMES H11D1M/2M/3M, MOC8204M 4N38M H11D1M/2M/3M, MOC8204M 4N38M All All 5 5 2 (20) 2 (20) 0.1 0.40 1.0 V mA (%)
Characteristics
Test Conditions
Device
Min.
Typ.*
Max.
Units
VCE(SAT)
tON tOFF
Non-Saturated Turn-on Time Turn-off Time
VCE = 10V, ICE = 2mA, RL = 100
s s
*All Typical values at TA = 25C Note: 2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
(c)2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2 www.fairchildsemi.com 3
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
DC Electrical Characteristics (TA = 25C unless otherwise specified.) (Continued)
Isolation Characteristics Symbol
VISO RISO CISO
Characteristic
Isolation Voltage Isolation Resistance Isolation Capacitance
Test Conditions
f = 60Hz, t = 1 sec. VI-O = 500 VDC f = 1MHz
Device
All All All
Min.
7500 10
11
Typ.*
Max.
Units
VACPEAK
0.2
pF
*All Typical values at TA = 25C
(c)2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com 4
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
Typical Performance Curves
1.8 1.7
NORMALIZED ICER - OUTPUT CURRENT
VF - FORWARD VOLTAGE (V)
10 IF = 50 mA 1 IF = 10 mA
1.6 1.5 1.4 1.3 TA = 25C 1.2 1.1 TA = 100C 1.0 1 10 100
Normalized to: VCE = 10 V IF = 10 mA RBE = 106 TA = 25C
TA = 55C
IF = 5 mA 0.1
0.01 0.1 1 10 100
IF - LED FORWARDCURRENT (mA)
VCE - COLLECTOR VOLTAGE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
10
Fig. 2 Normalized Output Characteristics
NORMALIZED ICER - OUTPUT CURRENT
NORMALIZED ICER - OUTPUT CURRENT
Normalized to: VCE = 10 V IF = 10 mA RBE = 106 TA = 25C 1
IF = 20 mA IF = 10 mA 1 IF = 5 mA
Normalized to: VCE = 10 V IF = 10 mA RBE = 106 TA = 25C
0.1
0.01 1 10
0.1 -60
-40
-20
0
20
40
60
80
100
IF - LED INPUT CURRENT (mA)
TA - AMBIENT TEMPERATURE (C)
Fig. 3 Normalized Output Current vs. LED Input Current
Fig. 4 Normalized Output Current vs. Temperature
NORMALIZED ICBO - COLLECTOR-BASE CURRENT
10 9 8 7 6 5 4 3 2 1 0 -60 IF = 5 mA -40 -20 0 20 40 60 80 100 IF = 10 mA IF = 50 mA Normalized to: VCE = 10 V IF = 10 mA RBE = 106 TA = 25C
NORMALIZED ICER - DARK CURRENT
10000
Normalized to: VCE = 100 V RBE = 106 TA = 25C
1000 VCE = 300 V 100 VCE = 100 V VCE = 50 V 10
1
0.1 10
20
30
40
50
60
70
80
90
100
110
TA - AMBIENT TEMPERATURE (C)
TA - AMBIENT TEMPERATURE (C)
Fig. 5 Normalized Dark Current vs. Ambient Temperature
Fig. 6 Normalized Collector-Base Current vs. Temperature
(c)2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com 5
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
Package Dimensions
Through Hole
0.350 (8.89) 0.320 (8.13)
Surface Mount
0.350 (8.89) 0.320 (8.13)
0.260 (6.60) 0.240 (6.10)
0.260 (6.60) 0.240 (6.10)
0.390 (9.90) 0.332 (8.43)
0.070 (1.77) 0.040 (1.02)
0.070 (1.77) 0.040 (1.02)
0.014 (0.36) 0.010 (0.25) 0.320 (8.13)
0.320 (8.13) 0.014 (0.36) 0.010 (0.25)
0.200 (5.08) 0.115 (2.93)
0.200 (5.08) 0.115 (2.93)
0.012 (0.30) 0.008 (0.20)
0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 (2.54) 15 0.012 (0.30)
0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41)
0.100 [2.54] 0.035 (0.88) 0.006 (0.16)
0.4" Lead Spacing
Recommended Pad Layout for Surface Mount Leadform
0.070 (1.78)
0.350 (8.89) 0.320 (8.13)
0.260 (6.60) 0.240 (6.10)
0.060 (1.52)
0.425 (10.79)
0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25)
0.100 (2.54) 0.305 (7.75) 0.030 (0.76)
0.200 (5.08) 0.115 (2.93)
0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.012 (0.30) 0.008 (0.21) 0.425 (10.80) 0.400 (10.16)
Note: All dimensions are in inches (millimeters).
(c)2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com 6
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
Ordering Information
Option
No option S SR2 T V TV SV SR2V
Order Entry Identifier (Example)
H11D1M H11D1SM H11D1SR2M H11D1TM H11D1VM H11D1TVM H11D1SVM H11D1SR2VM
Description
Standard Through Hole Device Surface Mount Lead Bend Surface Mount; Tape and Reel 0.4" Lead Spacing VDE 0884 VDE 0884, 0.4" Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape and Reel
Marking Information
1
H11D1 V
3 4
2 6
X YY Q
5
Definitions
1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) One digit year code, e.g., `7' Two digit work week ranging from `01' to `53' Assembly package code
(c)2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com 7
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
Carrier Tape Specifications
12.0 0.1 4.5 0.20 2.0 0.05 0.30 0.05 4.0 0.1 O1.5 MIN 1.75 0.10
11.5 1.0 21.0 0.1 9.1 0.20 24.0 0.3
0.1 MAX
10.1 0.20
O1.5 0.1/-0
User Direction of Feed
Reflow Profile
300 280 260 240 220 200 180 160 C 140 120 100 80 60 40 20 0 0 260C >245C = 42 Sec
Time above 183C = 90 Sec 1.822C/Sec Ramp up rate
33 Sec 60 120 180 270 360
Time (s)
(c)2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com 8
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R)
(R)
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM
Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
PDP-SPMTM Power220(R)
Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM The Power Franchise(R)
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com 9

▲Up To Search▲

Price & Availability of MOC8204M

	To Download MOC8204M Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .